Study of iv characteristics of gunn diodes objectives 1. Experiment5 study of iv characteristics of gunn diodes. Vi forward bias series resistance rs the forward biased pin diode behaves as a current controlled resistor that presents a linear resistance to the flow of rf current through the diode. Pin diode working characteristics and its applications. A pin diode is a diode with a wide, undoped intrinsic semiconductor region between a ptype. However, when reverse biased voltage is applied to the zener diode, it works in different manner. The vi characteristics or voltagecurrent characteristics of the pn junction diode is shown in the below figure. Equipments gunn oscillator, gunn power supply, pin modulator, isolator, frequency meter, variable attenuator, detector mount, waveguide stands, swr meter, cables and. Approximative iv curve of a pin diode where vbd is the break. The slope of the pn junction diode in forwarding bias shows the resistance is very low. Three different sets of doping concentrations are studied for each of the. The horizontal line in the below figure represents the amount of voltage applied across the pn junction diode whereas the vertical line represents the amount of current flows in the pn junction diode. This is the property of a pin diode that enables the device to be. Its iv characteristics determines the dc voltage at the forward bias.
The vi characteristics of pn junction diode in forwarding bias are nonlinear, that is, not a straight line. There are a number of pin diode characteristics that set this diode apart from other forms of diode. Macom and its affiliates reserve the right to make changes to the. As the capacitance of a capacitor reduces with increasing separation, this means that a pin diode will have a lower capacitance as the depletion region will be wider than a conventional diode.
Ma4ph451 datasheet indicates the 1 ma is the typical diode. Vi characteristics of pn junction diode electronics post. The vi characteristics of a zener diode is shown in the below figure. When forward biased voltage is applied to the zener diode, it works like a normal diode. Appendix b compares pin diode circuit characteristics to those of pnjunction devices. Normally the voltage is taken along the xaxis and current along yaxis. Pin diode is formed by sandwiching intrinsic layer high resistivity about 0.
These key pin diode characteristics include the following. Comparative study of iv characteristic of pin diode using vtcad. Calculate the resistance in forward bias and reverse bias. Using numerical methods, the high injection equations for carrier concentration in the ibase of a p i n diode are solved to determine storage time during diode recovery with equal forward and.
Pin diode working characteristics and its applications elprocus. Pin diode switch circuit for short time high current. The forward series resistance characteristic and the reverse capacitance characteristic are shown graphically in below figure for a. The performance characteristics of the pin diode depend mainly on the chip geometry and the processed semiconductor material in the intrinsic or i region, of the finished diode. This article presents a comparative study of current voltage characteristics for pin diodes. Rather than just having a ptype and an ntype layer, it has three layers such as. Output power and frequency as a function of voltage. Voltampere vi characteristics of a pn junction or semiconductor diode is the curve between voltage across the junction and the current through the circuit. The term pin diode gets its name from the fact that includes three main layers. Again the intrinsic layer increases the depletion region width. When the pin diode is at zero or reverse bias there is no stored.
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